Donor challenge: Your generous donation will be matched 2-to-1 right now. Your $5 becomes $15! Dear Internet Archive Supporter,. I ask only. Description: The NTE is a 65,–bit ( X 8 bit) Ultraviolet Erasable and Electrically Programmable. Read–Only Memory (EPROM) in a 28–Lead DIP. Details, datasheet, quote on part number: Two Line Output Control Because EPROMs are usually used in larger memory arrays, the product features a 2.

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A control gate electrode is deposited and further oxide covers it. Cambridge University Press, p. Once programmed, an EPROM can be erased by exposing it to strong ultraviolet light darasheet such as from a mercury-vapor light.

Where did you get them from?

274 parts do not have a battery and maintain their information as an array of magnetic charges. CORE part numbers are easily discerned once you exclude any prefix or suffix characters. In effect, the stored charge on the floating gate allows the threshold voltage of the transistor to be programmed. This approach allows you to more easily locate a device number, as many users do not know the manufacturer of the device in which they have interest.

A EPROM Datasheet

Although not as fast, serial eeproms and nvrams find use in many products due to their small size and low cost. Datasheeg be a house part number. A core part number is a number which identifies a device regardless of the manufacturer. The core number is normally easy to determine and serves as the industry standard description for nearly all common programmable devices datsheet multiple manufacturers.

For large volumes of parts thousands of pieces or moremask-programmed ROMs are the lowest cost devices to produce. Often this label was foil-backed to ensure its opacity to UV. Shining ultraviolet light on any part of an unpackaged device causes a photocurrent to flow from the floating gate back to the silicon substrate, thereby discharging the gate to its initial, uncharged condition photoelectric effect.

A programmed EPROM retains its data for a minimum of ten datashest twenty years, [5] with many still perom data after 35 or more years, and can be 276 an unlimited number of times without affecting the lifetime. EPROM programming is slow compared to other forms of memory. The example below describes how to determine a typical core part number. Microcontrollers are usually found in products which perform a single function such as microwave ovens, computer printers, automatic sprinkler controllers, etc.


The first generation devices were fabricated with the p-MOS techology. EPROMs had a limited but large number of erase cycles; the silicon dioxide around the gates would accumulate damage from each cycle, making the chip unreliable after several thousand cycles.

The listed device numbers conform to the core numbers used by most industry standard parts.

EPROM Datasheet

This is accomplished by sending the required command, address and data serially one bit at a time over single pins instead of the multiple pins of a parallel part. The recommended erasure procedure is exposure to UV light at Since the individual listing of every part number from every manufacturer creates a prohibitively large list, we list all supported manufacturers in a separate table with core part numbers arranged by technology family and pin count where applicable.

Help me find a datasheet for these eproms. Each bit of the word is a 1 or 0, depending on the storage transistor being switched on or off, conducting or non-conducting. I found this auction: Each has the manufacturers full part number printed on the device.

Retrieved from ” https: Dennis didn’t want me to return these, though, so I thought I’d try and see if I could look up a datasheet on them so I could try and either made an adapter for my eprom burner to burn them, or at the very least let someone else buy them who has a programmer that will actually burn them. By using this site, you agree to the Terms of Use and Privacy Policy. Erasure, however, has eproj be accomplished by non-electrical methods, since the gate electrode is not accessible electrically.

The process takes several minutes for UV lamps of convenient sizes; sunlight would erase a chip in weeks, and indoor fluorescent lighting over several years.


2764A Datasheet PDF

Magnetic tape Hard disk drive. Because higher-density parts have little exposed oxide between the layers of interconnects and gate, ultraviolet erasing becomes less practical for very large memories. Computer memory that can retrieve stored data after a power supply has been turned off and back on is datasheeh non-volatile.

Development of the EPROM memory cell started with investigation of faulty integrated circuits where the gate connections of transistors had broken. It was soon found that small-volume production was economical with EPROM parts, particularly when the advantage of rapid upgrades of firmware was considered.

The same chip came in somewhat cheaper opaque OTP packages for production. Eeprom parts must be erased before programming. Photons of the UV light cause ionization within the silicon oxide, which allow the stored charge on the floating gate to dissipate.

This prompted larger capacity devices to introduce a epeom mode”, allowing the manufacturer and device to be identified by the EPROM programmer. Dqtasheet the whole memory array is exposed, all the memory is erased at the same time.

But if you know what to ask for, he can still set you up with what you need. The effects of this process on the reliability of the part would have required extensive testing so they decided on the window instead. However, these require many weeks lead time to make, since the artwork for an IC mask layer must be altered to store data on the ROMs.

The CORE part number for each device is I’ll give that programming mode a shot! All articles with unsourced statements Articles with unsourced statements from October Commons category link from Wikidata Wikipedia articles with GND identifiers. When the high voltage is removed, the electrons are trapped on the electrode. Storing data in the datashet requires selecting a given address and applying a higher voltage to the transistors.